, 2013, Accepted Manuscript
DOI: 10.1039/C3NR01015E, Communication
DOI: 10.1039/C3NR01015E, Communication
Young Tack Lee, Syed Raza Ali Raza, Pyo Jin Jeon, Ryong Ha, Heon-Jin Choi, Seongil Im
We demonstrate logic and static random access memory (SRAM) circuits using a 100 [small mu ]m-long and 100 nm-thin single ZnO nanowire (NW), which plays as a channel of field-effect transistors (FETs)...
The content of this RSS Feed (c) The Royal Society of Chemistry
We demonstrate logic and static random access memory (SRAM) circuits using a 100 [small mu ]m-long and 100 nm-thin single ZnO nanowire (NW), which plays as a channel of field-effect transistors (FETs)...
The content of this RSS Feed (c) The Royal Society of Chemistry