Nanoscale, 2012, Advance Article
DOI: 10.1039/C2NR32350H, Paper
DOI: 10.1039/C2NR32350H, Paper
Prayudi Lianto, Sihang Yu, Jiaxin Wu, C. V. Thompson, W. K. Choi
Stability of isolated metal catalysts for vertical metal-assisted chemical etching of silicon depends on etch chemistry and catalyst spacing.
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Stability of isolated metal catalysts for vertical metal-assisted chemical etching of silicon depends on etch chemistry and catalyst spacing.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry