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Atomistic modeling of metallic nanowires in silicon

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Nanoscale, 2013, Accepted Manuscript
DOI: 10.1039/C3NR01796F, Paper
Hoon Ryu, Sunhee Lee, Bent Weber, Suddhasatta Mahapatra, Lloyd Hollenberg, Michelle Simmons, Gerhard Klimeck
Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling limit with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors,...
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