Nanoscale, 2013, Advance Article
DOI: 10.1039/C3NR01796F, Paper
DOI: 10.1039/C3NR01796F, Paper
Hoon Ryu, Sunhee Lee, Bent Weber, Suddhasatta Mahapatra, Lloyd C. L. Hollenberg, Michelle Y. Simmons, Gerhard Klimeck
Metallic conduction in atomic-scale highly P-doped Si nanowires is theoretically studied using a tight-binding approach coupled to Schrodinger-Poisson simulations. The density of states and spatial distributions of electrons confirm they remain metallic down to the atomic-scale, which bodes well for their utility as ultra-thin metallic interconnects for atomic-scale devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Metallic conduction in atomic-scale highly P-doped Si nanowires is theoretically studied using a tight-binding approach coupled to Schrodinger-Poisson simulations. The density of states and spatial distributions of electrons confirm they remain metallic down to the atomic-scale, which bodes well for their utility as ultra-thin metallic interconnects for atomic-scale devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry