Nanoscale, 2014, Advance Article
DOI: 10.1039/C3NR04028C, Paper
DOI: 10.1039/C3NR04028C, Paper
Ilker Demiroglu, Sergio Tosoni, Francesc Illas, Stefan T. Bromley
Nanoporosity-induced bandwidth reduction is predicted to be a general means to controllably increase the band gap in semi-conducting materials.
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Nanoporosity-induced bandwidth reduction is predicted to be a general means to controllably increase the band gap in semi-conducting materials.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry