Nanoscale, 2014, 6,688-692
DOI: 10.1039/C3NR04953A, Communication
DOI: 10.1039/C3NR04953A, Communication
Kohei Matsubara, Siya Huang, Mitsumasa Iwamoto, Wei Pan
Improved electrical conductivity and p-type field effect transistors with an enhanced gating effect are realized with Li-doped NiO nanowires via a facile electrospinning technique.
The content of this RSS Feed (c) The Royal Society of Chemistry
Improved electrical conductivity and p-type field effect transistors with an enhanced gating effect are realized with Li-doped NiO nanowires via a facile electrospinning technique.
The content of this RSS Feed (c) The Royal Society of Chemistry