Nanoscale, 2012, Accepted Manuscript
DOI: 10.1039/C2NR32981F, Communication
DOI: 10.1039/C2NR32981F, Communication
Sameer S Walavalkar, Andrew P. Homyk, M. David Henry, Axel Scherer
In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible...
The content of this RSS Feed (c) The Royal Society of Chemistry
In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible...
The content of this RSS Feed (c) The Royal Society of Chemistry