Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

Nanoscale, 2013, 5,4490-4494
DOI: 10.1039/C3NR33692A, Paper

Z. Q. Wang, H. Y. Xu, L. Zhang, X. H. Li, J. G. Ma, X. T. Zhang, Y. C. Liu
ZnO-based resistive switching memory devices offer improved performance with the introduction of Ag-nanoclusters due to enhanced local-electric-field.
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